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| EIC0910-5 ISSUED DATE: 04-19-04 9.50-10.50GHz, 5W Internally Matched Power FET * * * * * 9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE: 30% TYPICAL +37.5 dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN HERMETIC METAL FLANGE PACKAGE SN Excelics EIC0910-5 YM ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIC0910-5 SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Gain at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Gain Flatness f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600mA Power Added Efficiency at 1dB compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Drain Current at 1dB Compression Output 3rd Order Intermodulation Distortion f=10.5GHz f=10MHz 2-Tone Test. Pout=26.5 dBm S.C.L Ids @ 65% Idss Saturated Drain Current Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=30mA MIN 36.5 6 TYP 37.5 7 0.6 30 1700 1900 MAX UNIT dBm dB dB % mA dBc -43 -46 2900 -2.5 5.0 3500 -4 5.5 o P1dB G1dB G PAE Id1dB IM3 Idss Vp Rth mA V C/W Thermal Resistance (Au-Sn Eutectic Attach) ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25C SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation CONTINUOUS1,2 10V -4.5V Idss 60mA @ 3dB Compression 150 oC -65 to +150 oC 23W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com |
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